MOSFET P - IRF9530
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MOSFET Canal P IRF9530

EVO860

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The IRF9530NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB package. This logic level MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching.

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  • Drain to source voltage Vds is -100V
  • Gate to source voltage is ±20V
  • On resistance Rds(on) of 200mohm
  • Power dissipation Pd of 79W at 25°C
  • Continuous drain current Id of -14A at Vgs -10V and 25°C
  • Operating junction temperature range from -55°C to 175°C

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IRF9530NPBF

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